Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1854199
Title: Optical properties of InAsGaAs surface quantum dots
Authors: Miao, Z.L.
Zhang, Y.W. 
Chua, S.J. 
Chye, Y.H.
Chen, P.
Tripathy, S.
Issue Date: 17-Jan-2005
Citation: Miao, Z.L., Zhang, Y.W., Chua, S.J., Chye, Y.H., Chen, P., Tripathy, S. (2005-01-17). Optical properties of InAsGaAs surface quantum dots. Applied Physics Letters 86 (3) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1854199
Abstract: We report long-wavelength photoluminescence emission (∼1.6-1.7 μm) from self-organized InAs surface quantum dots (SQDs) grown on GaAs substrate without any capping layers. Photoluminescence (PL) properties of these quantum dots (QDs) are strongly affected by the surface states and strain relaxation mechanism. Compared to the case of capped InAs QDs, a large redshift of about 466 nm observed in the PL spectrum of SQDs can be attributed to the strain relaxation and the strong coupling of the confined states with the surface states. The PL properties of these SQDs can also be influenced by the presence of quasi-infinite surface potential. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/51005
ISSN: 00036951
DOI: 10.1063/1.1854199
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