Please use this identifier to cite or link to this item:
|Title:||Influence of spin relaxation on magnetoresistance|
|Authors:||Tan, S.G. |
Bala Kumar, S.
|Source:||Tan, S.G., Jalil, M.B.A., Bala Kumar, S. (2007). Influence of spin relaxation on magnetoresistance. Journal of Applied Physics 101 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2512211|
|Abstract:||We represent the spin-dependent transport across a pseudospin-valve structure as described by the spin drift-diffusion (SDD) theory by an effective two-current model, in which the spin relaxation effects are globally absorbed into the two effective branch resistances. Our approach has eliminated the need for "spin flip" resistances interconnecting the two spin branches, which have the disadvantage of artificially localizing the effects of spin relaxation to arbitrary spatial points. We confirm the accuracy of our effective two-current model with the full numerical SDD solution. Based on our model, we found that (i) the overall magnetoresistance (MR) is much more sensitive to the spin relaxation effect in the nonmagnetic (NM) layer, compared to that in the ferromagnetic (FM) layers, and that (ii) the effective spin relaxation length λE in the NM layer is intrinsically linked to the conductivity N,F of the NM and FM layers. We found that λE = λN ()12, where λN is the nominal spin relaxation length in the NM layer and = (N F). The analytical link between spin relaxation and conductivity explains the previously described anomalous suppression of MR, when the conductivity ratio exceeds a certain critical value C. © 2007 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 6, 2017
WEB OF SCIENCETM
checked on Nov 22, 2017
checked on Dec 10, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.