Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1615840
Title: Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure
Authors: Ho, V.
Teo, L.W.
Choi, W.K. 
Chim, W.K. 
Tay, M.S.
Antoniadis, D.A.
Fitzgerald, E.A.
Du, A.Y.
Tung, C.H.
Liu, R. 
Wee, A.T.S. 
Issue Date: 27-Oct-2003
Source: Ho, V., Teo, L.W., Choi, W.K., Chim, W.K., Tay, M.S., Antoniadis, D.A., Fitzgerald, E.A., Du, A.Y., Tung, C.H., Liu, R., Wee, A.T.S. (2003-10-27). Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure. Applied Physics Letters 83 (17) : 3558-3560. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1615840
Abstract: The effect of rapid thermal oxide (RTO) layer thickness and germanium concentration on the nanocrystal formation and charge storage/retention capabilities of a trilayer memory structure was discussed. The results showed that the RTO and the capping oxide layers were not totally effective in confining the Ge nanocrystals in the middle layer when a pure Ge middle layer was used for the formation of nanocrystals. A diffusion of Ge atoms through the RTO and into the silicon substrate was observed with the help of transmission electron microscopy and secondary ion mass spectroscopy, when the RTO layer thickness was reduced to 2.5 nm.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/50907
ISSN: 00036951
DOI: 10.1063/1.1615840
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