Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2388246
Title: Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
Authors: Zhu, M. 
Tung, C.-H.
Yeo, Y.-C. 
Issue Date: 2006
Citation: Zhu, M., Tung, C.-H., Yeo, Y.-C. (2006). Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide. Applied Physics Letters 89 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2388246
Abstract: The authors demonstrate a passivation technique for GaAs substrate by employing an aluminum oxynitride (AlON) interfacial passivation layer. X-ray photoelectron spectroscopy and transmission electron microscopy results show that the AlON interfacial passivation layer effectively suppresses the formation of Ga or As oxide during the gate dielectric deposition process. This enabled the fabrication of high quality GaAs n -channel metal-oxide-semiconductor capacitors with Hf O2 gate dielectric and TaN metal gate electrode. The metal gate/high- k gate dielectric stack on GaAs demonstrated an equivalent Si O2 thickness of 2.2 nm and low leakage current density of 4.27× 10-4 A cm2 at a gate bias equal to Vfb -1 V. Excellent capacitance-voltage characteristics with low frequency dispersion (∼4%) were also obtained. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/50861
ISSN: 00036951
DOI: 10.1063/1.2388246
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