Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.121379
Title: Observation of optically-active metastable defects in undoped GaN epilayers
Authors: Xu, S.J. 
Li, G.
Chua, S.J. 
Wang, X.C.
Wang, W.
Issue Date: 1998
Source: Xu, S.J., Li, G., Chua, S.J., Wang, X.C., Wang, W. (1998). Observation of optically-active metastable defects in undoped GaN epilayers. Applied Physics Letters 72 (19) : 2451-2453. ScholarBank@NUS Repository. https://doi.org/10.1063/1.121379
Abstract: Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor epitaxy was investigated with photoluminescence. A new metastable defect emitting blue light was found, besides the well-known yellow luminescence centers. With excitation by the 325 nm He-Cd laser, this metastable defect, at low temperature, exhibits the luminescence fatigue effect with the decay time determined to be about 6 min. When the temperature is increased to room temperature, it recovers its optically-active state. The yellow band emission increases in intensity as the blue band emission decreases in intensity. Analysis shows that this metastable center is a hole trap, and Ga vacancy is its most probable candidate. © 1998 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/50582
ISSN: 00036951
DOI: 10.1063/1.121379
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

74
checked on Dec 7, 2017

WEB OF SCIENCETM
Citations

70
checked on Nov 22, 2017

Page view(s)

35
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.