Please use this identifier to cite or link to this item:
|Title:||Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots|
|Authors:||Xu, S.J. |
|Citation:||Xu, S.J., Wang, X.C., Chua, S.J., Wang, C.H., Fan, W.J., Jiang, J., Xie, X.G. (1998). Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots. Applied Physics Letters 72 (25) : 3335-3337. ScholarBank@NUS Repository. https://doi.org/10.1063/1.121595|
|Abstract:||Postgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dots grown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing of the luminescence linewidth (from 78.9 to 20.5 meV) from the InAs dot layer occurs together with about 260 meV blueshift at annealing temperatures up to 850°C. Observation of high-resolution transmission electron microscopy shows the existence of the dots under lower annealing temperatures but disappearance of the dots annealed at 850°C. The excited-state-filling experiments for the samples show that the luminescence of the samples annealed at 850°C exhibits quantum well-like behavior. Comparing with the reference quantum well, we demonstrate significant enhancement of the interdiffusion in the dot layer. © 1998 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 6, 2018
checked on Oct 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.