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Title: Study of domain wall devices in magnetic nanowires
Keywords: magnetic domain walls, nanowires, domain wall generation, perpendicular magnetic anisotropy, magnetocapacitance, thermal switching
Issue Date: 20-Aug-2013
Source: KULOTHUNGASAGARAN NARAYANAPILLAI (2013-08-20). Study of domain wall devices in magnetic nanowires. ScholarBank@NUS Repository.
Abstract: The ability to manipulate the electrons? spin has paved the way for the next emerging branch in electronics ? spintronics. Storing information in 3-dimensional structures using magnetic domain walls has been proposed for applications such as next generation memory devices. In this work, important aspects such as domain wall generation, propagation, and detection have been studied in permalloy (NiFe), CoFeB trilayers, and Co/Pd multilayer structures. We have investigated an alternative method to generate domain walls at predefined positions along the nanowire with the assistance of Joule heating in perpendicular trilayer systems. In addition, domain wall control through artificially introduced vertical pinning sites has been experimentally studied by introducing a `nanotrench? and the results have been supported by micromagnetic simulations. Dimension dependent studies of the nanotrench have been carried out for different types of domain walls. Furthermore, magnetic domain wall induced capacitance variation is investigated as a tool to detect magnetic reversal in nanowires for in- and out-of-plane magnetization configurations.
Appears in Collections:Ph.D Theses (Open)

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