Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/49505
Title: THERMAL MODELING AND CHARACTERIZATION OF HIGH POWER DEVICES
Authors: LING HUEY LIN, JOYCE
Keywords: FEA, Infrared, Thermoreflectance, MMIC, Analytical, Temperature
Issue Date: 24-Sep-2013
Source: LING HUEY LIN, JOYCE (2013-09-24). THERMAL MODELING AND CHARACTERIZATION OF HIGH POWER DEVICES. ScholarBank@NUS Repository.
Abstract: An accurate prediction of the peak operating junction temperature in high-power electronic devices provides useful information on the reliability and lifetime of devices. An accurate closed-form analytical solution for calculating the junction temperature of a MMIC device is developed. Unlike most previous works, the location of the heat dissipation region is assumed to be embedded under the gate which is more realistic. The accuracy of this new method has been verified with junction temperatures of MMIC devices measured using thermoreflectance thermography (TRT) as well as those calculated using FEA. The capability of TRT has also been demonstrated on measuring the peak junction/surface temperatures of both packaged and unpackaged light emitting diodes (LEDs). Unlike infrared thermography (IRT), TRT is a potentially great technique for measuring LED junction temperature since the encapsulation layer is usually transparent to the TR measurement wavelength.
URI: http://scholarbank.nus.edu.sg/handle/10635/49505
Appears in Collections:Ph.D Theses (Open)

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