Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/48584
Title: ANALYSIS AND DESIGN OF SILICON-BASED MILLIMETER-WAVE AMPLIFIERS
Authors: BI XIAOJUN
Keywords: Millimeter-wave, Amplifier, Silicon, Analysis, 60 GHz, bandpass
Issue Date: 22-Apr-2013
Source: BI XIAOJUN (2013-04-22). ANALYSIS AND DESIGN OF SILICON-BASED MILLIMETER-WAVE AMPLIFIERS. ScholarBank@NUS Repository.
Abstract: With the continuous scaling of silicon processes, interest in silicon-based millimeter-wave frontends has been growing over the past few years. As the dominant roles in these silicon-based front-ends, the millimeter-wave amplifiers, including the power amplifier (PA) and the low noise amplifier (LNA), encounter numerous design challenges owing to the higher operating frequencies. This thesis aims to analyze the existing issues and propose new circuit topologies to overcome these challenges. The following summarises the main contributions presented in this thesis: the unilateralization criterion revealed through Y-parameter matrix analysis; A novel method of achieving above 20 % PAE for 60 GHz PA by tuning the band to the frequency range in use; A high performance W-band bandpass LNA with 19 mW power consumption, above 45 dB gain and 7.2 dB noise figure; A method to fundamentally boost the gain of cascode stage utilizing a novel passive compensation network.
URI: http://scholarbank.nus.edu.sg/handle/10635/48584
Appears in Collections:Ph.D Theses (Open)

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