Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/48361
Title: Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach
Authors: GUO YAN
Keywords: Semiconductor Simulation, III-V, DG-UTB, Ballistic Transport, Thickness and Orientation Effect
Issue Date: 23-Jul-2013
Source: GUO YAN (2013-07-23). Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach. ScholarBank@NUS Repository.
Abstract: III-Vs with their improved transport properties, along with novel double-gate ultra-thin-body (DG-UTB) design, could effectively enhance the performance of the nanoscale MOS devices. In this work, we adopt the sp3d5s* tight-binding model and top-of-barrier model to study the orientation and body thickness effects on the III-V DG-UTB device performance. The work consists of two parts: (1) the III-V comparisons of ballistic transport in different transport direction/surface orientation and voltage scaling of CMOS based on ITRS standard; (2) the body thickness effect on the GaSb UTB device performance and the analysis of electrostatics of UTB with different thickness.
URI: http://scholarbank.nus.edu.sg/handle/10635/48361
Appears in Collections:Master's Theses (Open)

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