Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/48340
Title: Multi-Level Phase Change Random Access Memory (PCRAM) Devices with Ultrathin Barrier Layers
Authors: ASHVINI GYANATHAN
Keywords: Multi-level PCRAM, Ge2Sb2Te5, Nitrogen-doped Ge2Sb2Te5, AgInSbTe, Ge1Sb4Te7, Ultrathin barrier layer
Issue Date: 8-Apr-2013
Source: ASHVINI GYANATHAN (2013-04-08). Multi-Level Phase Change Random Access Memory (PCRAM) Devices with Ultrathin Barrier Layers. ScholarBank@NUS Repository.
Abstract: Phase change random access memory (PCRAM) is one of the most promising contender to replace FLASH memory. The ability of PCRAM to undergo reversible phase switching serves as its basic operational mechanism. PCRAM also exhibits multi-level programming capabilities. However, the problem of resistance drifting has impeded the advancement in multi-level programming of PCRAM devices. This thesis summarizes work on the device engineering of multi-level PCRAM devices to eliminate the problem of resistance drifting.
URI: http://scholarbank.nus.edu.sg/handle/10635/48340
Appears in Collections:Ph.D Theses (Open)

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