Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/48335
Title: Electrochemical deposition of CIS films for photovoltaic applications
Authors: ZHANG SHIYUN
Keywords: Photovoltaic, Copper indium diselenide, CIS, Electrochemical deposition, thin films, Solar Cell
Issue Date: 26-Apr-2013
Source: ZHANG SHIYUN (2013-04-26). Electrochemical deposition of CIS films for photovoltaic applications. ScholarBank@NUS Repository.
Abstract: Copper indium diselenide polycrystalline films of p-, i- and n-type electrical conductivity were deposited on Molybdenum (metal strip and sputtered on Si-wafer) from a single bath using direct-current and pulse-plating deposition, at cathodic potential ranging -0.3V to -1.3V, with a thickness between 100-200nm. Electrochemical deposition mechanism results were correlated using Energy-Dispersive-X-ray Spectroscopy and X-Ray-Diffraction. Scanning-Electron-Microscopy was employed for surface morphology studies and Photoelectrochemical cell for p/i/n-type films conductivity. Photovoltage results indicate that p- and n-type CIS layers can be obtained by varying deposition potential under DC-plating at room temperature, pulse-plating at room temperature and 40?C on Mo-wafer. Generally, p-type can be obtained at relatively high potential of -0.3V and -0.7V, where n-type at more negative deposition potentials. To form a complete p-i-n junction from a single bath, pulse-plating at 40?C is recommended with negative plating limiting to pulse cycled from -0.3V (p-type) to -0.7V (intrinsic) and finally to -1.1V (n-type).
URI: http://scholarbank.nus.edu.sg/handle/10635/48335
Appears in Collections:Master's Theses (Open)

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