Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/48324
Title: Perpendicular Magnetic Anisotropy Materials for Spintronics Applications
Authors: HO PIN
Keywords: L10-FePt, perpendicular magnetic anisotropy, psuedo spin valve, GMR, magnetoresistance, spintronics
Issue Date: 2-Aug-2013
Source: HO PIN (2013-08-02). Perpendicular Magnetic Anisotropy Materials for Spintronics Applications. ScholarBank@NUS Repository.
Abstract: Ferromagnetic materials with large perpendicular magnetic anisotropy (PMA) are investigated for spin transfer torque magnetic random access memory (STT-MRAM) elements, as they fulfill thermal stability at low dimensions and lower the critical current density for STT switching. L10-FePt is a potential candidate for such perpendicular systems due to its high magnetocrystalline anisotropy. This thesis revolves around the study of high PMA L10-FePt in pseudo spin valves (PSVs). Different spacer materials, Ag and TiN, were used. The PSV with Ag spacer displayed an improved giant magnetoresistance of 1.1 % compared to the Au, Pt and Pd spacer reported earlier. The use of TiN spacer mitigated the interlayer diffusion issue as TiN was chemically stable towards FePt and was also a good diffusion barrier. The thesis also further demonstrated PSVs consisting of ultra-thin L10-FePt free layer of thickness less than 4 nm, which was desirable for reducing the STT critical current density.
URI: http://scholarbank.nus.edu.sg/handle/10635/48324
Appears in Collections:Ph.D Theses (Open)

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