Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/43420
Title: Mechanism and Catalyst Stability of Metal-Assisted Chemical Etching of Silicon
Authors: PRAYUDI LIANTO
Keywords: metal-assisted, etching, silicon, holes, gold, catalyst
Issue Date: 23-Jan-2013
Source: PRAYUDI LIANTO (2013-01-23). Mechanism and Catalyst Stability of Metal-Assisted Chemical Etching of Silicon. ScholarBank@NUS Repository.
Abstract: A systematic study on the mechanism and catalyst stability of metal assisted chemical etching (MACE) of Si in HF and H2O2 using isolated Au catalyst has been carried out. The role of excess electronic holes on the pit formation was investigated by looking at the effects of catalyst proximity, etchant chemistries, and external electric field. Etch stability diagram was constructed as a function of catalyst spacing and H2O2 concentration. Next, the etching characteristics with interconnected catalyst were investigated. Porosity of the nanostructures was exploited to obtain an ordered array of Si nanocones. The influence of dopant and etchant composition on the porosity of nanowires was examined. Finally, external electric field was used to develop a new etching process called bias- and metal-assisted chemical etching (BiMACE). Etching mechanism of BiMACE was presented and comparisons to MACE were made. Influence of dopant and bias polarity in the etching mechanism was also investigated.
URI: http://scholarbank.nus.edu.sg/handle/10635/43420
Appears in Collections:Ph.D Theses (Open)

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