Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.85.155443
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dc.titleThermoelectric transport with electron-phonon coupling and electron-electron interaction in molecular junctions
dc.contributor.authorRen, J.
dc.contributor.authorZhu, J.-X.
dc.contributor.authorGubernatis, J.E.
dc.contributor.authorWang, C.
dc.contributor.authorLi, B.
dc.date.accessioned2013-07-23T09:25:41Z
dc.date.available2013-07-23T09:25:41Z
dc.date.issued2012
dc.identifier.citationRen, J., Zhu, J.-X., Gubernatis, J.E., Wang, C., Li, B. (2012). Thermoelectric transport with electron-phonon coupling and electron-electron interaction in molecular junctions. Physical Review B - Condensed Matter and Materials Physics 85 (15). ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.85.155443
dc.identifier.issn10980121
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/43126
dc.description.abstractWithin the framework of nonequilibrium Green's functions, we investigate the thermoelectric transport in a single molecular junction with electron-phonon and electron-electron interactions. By transforming into a displaced phonon basis, we are able to deal with these interactions nonperturbatively. Then, by invoking the weak tunneling limit, we are able to calculate the thermoelectricity. Results show that at low temperatures, resonances of the thermoelectric figure of merit, ZT, occur around the sides of resonances of electronic conductance but drop dramatically to zero at exactly these resonant points. We find ZT can be enhanced by increasing electron-phonon coupling and Coulomb repulsion, and an optimal enhancement is obtained when these two interactions are competing. Our results indicate a great potential for single molecular junctions as good thermoelectric devices over a wide range of temperatures. © 2012 American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.85.155443
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentCOMPUTER SCIENCE
dc.description.doi10.1103/PhysRevB.85.155443
dc.description.sourcetitlePhysical Review B - Condensed Matter and Materials Physics
dc.description.volume85
dc.description.issue15
dc.description.codenPRBMD
dc.identifier.isiut000303116000004
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