Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/37907
Title: Perpendicular magnetic anisotropy materials for magnetic random access memory applications
Authors: TAIEBEH TAHMASEBI
Keywords: magnetic random access memory, STT-MRAM,perpendicular magnetic anisotropy, PMA, L10 FePt, Co/Pd multilayers, CoFeB with PMA, MTJ stack, pMTJ
Issue Date: 23-Aug-2012
Source: TAIEBEH TAHMASEBI (2012-08-23). Perpendicular magnetic anisotropy materials for magnetic random access memory applications. ScholarBank@NUS Repository.
Abstract: Spin transfer torque magnetic random access memory (STT-MRAM) devices have been known as the most promising future non-volatile memory candidate. Compared to the in-plane anisotropy magnetic materials, magnetoresistive devices with perpendicular magnetic anisotropy (PMA) allow lower write current, improved thermal stability and therefore excellent scalability for future applications. The objective of this thesis was to investigate different magnetic materials with PMA for emerging and future MRAM technology. As a result, efforts are made into engineering different material design structures to be applicable in real MRAM applications. In this particular thesis, we focused on studying three different classes of magnetic materials; Thin CoFeB with interfacial PMA for emerging MRAM applications was investigated and a specific stack with higher thermal stability and therefore smaller cell size was proposed. We have also studied Co /Pd -based multilayers with PMA for near-future MRAM applications; and finally, chemically ordered L10 FePt growth for future MRAM applications was investigated, in detail.
URI: http://scholarbank.nus.edu.sg/handle/10635/37907
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