Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/37704
Title: NANOSTRUCTURED MATERIALS FOR MEMORY APPLICATIONS
Authors: HUANG MEIYU STELLA
Keywords: non-volatile memory, nanocrystals, high work function metals, spin-on-glass, block co-polymer template, multi-level memory cell
Issue Date: 23-Aug-2012
Source: HUANG MEIYU STELLA (2012-08-23). NANOSTRUCTURED MATERIALS FOR MEMORY APPLICATIONS. ScholarBank@NUS Repository.
Abstract: Scaling limitations on the tunnelling oxide in Flash memory devices have motivated the inevitable replacement of the conventional polysilicon charge storage layer with discrete charge storage centres (CSCs). This allows further scaling of Flash memory cells to produce high density, low operating cost and high speed performance Flash memory devices. In this work, a high number density of uniformly distributed, monodispersed nanostructured materials such as high work function metal nanocrystals and metal oxide nanoparticles embedded in a spin-on-glass (SOG) dielectric film were prepared through non-templated and templated means to serve as CSCs for application in nanocrystal memories and Charge Trap Flash memories. The fabricated metal-insulator-silicon (MIS) capacitors containing these CSCs achieved excellent memory performance. Large memory windows at low operating voltages of less than 10 V, good charge retention with the use of a 3 nm thick tunnelling oxide and multi-bit operation were demonstrated.
URI: http://scholarbank.nus.edu.sg/handle/10635/37704
Appears in Collections:Ph.D Theses (Open)

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