Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/37465
Title: p-n Junction Diode Fabricated From ZnO Nanorod Grown By Aqueous Solution Method
Authors: NGUYEN XUAN SANG
Keywords: ZnO, homojunction, LED
Issue Date: 17-Aug-2012
Source: NGUYEN XUAN SANG (2012-08-17). p-n Junction Diode Fabricated From ZnO Nanorod Grown By Aqueous Solution Method. ScholarBank@NUS Repository.
Abstract: The growth of n-type and p-type ZnO nanorods using aqueous solution method was introduced in this thesis. The n- and p- ZnO nanorods are single crystalline and vertically aligned on GaN substrate. The n-type ZnO nanorods was obtained either by unintentional hydrogen doping or doping with Ga. The p-type ZnO nanorods was obtained by doping with potassium. This work overcomes the difficulty that remains in p-type ZnO synthesizing to obtain stable p-type ZnO with relatively high carrier concentration, 2x10^17cm^-3, and high carrier mobility, 117cm^2/Vs. The p-type conductivity of ZnO nanorods was confirmed by fabrication of p-type ZnO nanorod/n-GaN film heterojunction LED and ZnO core-shell nanorod homojunction LED. These LEDs demonstrate rectifying I-V characteristics and electroluminescence spectra. The EL spectra of these LEDs contain an ultraviolet peak near band-edge of ZnO and a broad visible peak centered at 560nm.
URI: http://scholarbank.nus.edu.sg/handle/10635/37465
Appears in Collections:Ph.D Theses (Open)

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