Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/37448
Title: Ultrafast Phase-Change for Data Storage Applications
Authors: LOKE KOK LEONG DESMOND
Keywords: Nonvolatile memory, Phase-change memory, Nanostructured materials, Crystallization kinetics, Ultrafast speed, Thermal confinement
Issue Date: 3-Sep-2012
Source: LOKE KOK LEONG DESMOND (2012-09-03). Ultrafast Phase-Change for Data Storage Applications. ScholarBank@NUS Repository.
Abstract: Phase-change random access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization speed and amorphous-phase stability presents a key challenge. In this thesis, nanoscale effects in phase-change (PC) materials and functional materials were exploited to achieve fast-speed, low-power, and high-endurance in PCRAM cells. Incubations of nanostructural units in PC materials were studied to control the crystallization kinetics by the application of a constant low-voltage. To change the PC mechanisms, nanostructured PC materials were also investigated by controlling feature sizes. Thermal effects in nanoscale PC materials with superlattice-like (SLL) structures were further examined to control the thermal-confinement properties by varying device sizes. To enhance thermal-confinement, thermal properties of nanoscale SLL dielectric materials were studied by varying the number of periods in SLL dielectric. These studies pave the way for achieving a broadly applicable memory device, capable of non-volatile operations beyond GHz data-transfer rates.
URI: http://scholarbank.nus.edu.sg/handle/10635/37448
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