Please use this identifier to cite or link to this item:
Title: High Performance Lateral Phase Change Random Access Memory
Keywords: phase change, memory, lateral PCRAM, failure analysis, superlattice-like medium, multi-level
Issue Date: 12-Nov-2012
Citation: YANG HONGXIN (2012-11-12). High Performance Lateral Phase Change Random Access Memory. ScholarBank@NUS Repository.
Abstract: Phase change random access memory (PCRAM) is one of the best candidates for next generation non-volatile memory. Lateral PCRAM presents one of the best device structures for achieving high device performance. This thesis presents the solutions to achieve high performance lateral PCRAM devices. Firstly, the failure mechanism and analysis of lateral PCRAM devices are investigated. Large plastic deformation is identified as the main reason for failure of lateral PCRAM. Then, superlattice-Like (SLL) structure is proposed to limit plastic deformation in phase change material to improve the lifetime of lateral PCRAM. Using growth-dominant SLL medium in lateral PCRAM, better lifetime and lower RESET current were achieved. Besides that, edge-contact structure is proposed for lateral PCRAM to reduce the RESET current. Lastly, multi-level lateral PCRAM devices were investigated based on lateral PCRAM with growth-dominant SLL structure and a new SLL structure incorporating a phase change material and a dielectric material.
Appears in Collections:Ph.D Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
High performance lateral PCRAM.pdf8.59 MBAdobe PDF



Page view(s)

checked on Nov 3, 2018


checked on Nov 3, 2018

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.