Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/36348
Title: Epitaxial graphene: synthesis, characterization, and devices
Authors: RAM SEVAK SINGH
Keywords: Epitaxial graphene, Silicon carbide, Photodetectors, Raman spectroscopy, Scanning tunneling microscopy, Linear magnetoresistance
Issue Date: 16-Aug-2012
Source: RAM SEVAK SINGH (2012-08-16). Epitaxial graphene: synthesis, characterization, and devices. ScholarBank@NUS Repository.
Abstract: The aim of this thesis is to prepare, characterize and explore epitaxial graphene (EG) in devices. EG sample preparation on semi insulating Si-face 4H SiC was carried out by thermal annealing of the SiC substrates in a home-built customized UHV chamber that has been described in chapter3. The subsequent chapters report work related to photoconductive devices. A simple laser irradiation method has been developed to fabricate Schottky junction photodetectors on (~two-layer) EG. Furthermore, an asymmetric metallization scheme is utilized with pristine EG to study the photoconductive characteristics of devices. The effect of the number of EG layers on the photodetector performance is also investigated. In the context of my photoconductive device study, I developed a simple, dry, effective, and environmentally safe method of mild oxygen plasma treatment in EG devices to produce high-gain ultraviolet (UV) photodetectors. Finally, magnetotransport studies from room temperature to 2 K in EG prepared on C-face SiC are carried out.
URI: http://scholarbank.nus.edu.sg/handle/10635/36348
Appears in Collections:Ph.D Theses (Open)

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