Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/35860
Title: Ferroelectric gating of graphene
Authors: NI GUANGXIN
Keywords: Mechanical Exfoliated Graphene, CVD Graphene, Ferroelectric Thin Film, Non-volatile Memory, Flexible Transparent Conductor, Nanotransistor
Issue Date: 29-Jun-2012
Source: NI GUANGXIN (2012-06-29). Ferroelectric gating of graphene. ScholarBank@NUS Repository.
Abstract: In this dissertation, we describe experimental investigations of charge transport properties of both mechanically exfoliated and chemical vapor deposited (CVD) graphene and its potential applications using functional ferroelectric substrates. We demonstrated a non-volatile memory device in a graphene field-effect transistor structure using ferroelectric gating. Two distinct bistable resistance states were maintained by controlling the polarization of the ferroelectric thin film. Furthermore, this thesis is devoted a better understanding of CVD graphene. We elucidated a new type of quasi-periodic nanoripple arrays (NRAs) within a single graphene domain. The impact of these NRAs on charge transport of CVD graphene was also studied. Utilizing the hybrid CVD graphene and ferroelectric polymer structure, we demonstrated a novel type of flexible transparent conductors with low sheet resistance, high transparency and good mechanical flexibility. By transferring large-scale CVD graphene to wafer-size ferroelectric inorganic substrates (PZT), an array of low-voltage operation transistors and non-volatile memory devices were fabricated and investigated.
URI: http://scholarbank.nus.edu.sg/handle/10635/35860
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