Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/35570
Title: SOURCE AND DRAIN EXTERNAL RESISTANCE REDUCTION FOR ADVANCED TRANSISTORS
Authors: KOH SHAO MING
Keywords: Contact resistance, external resistance, FinFETs, Schottky barrier, silicon carbon, strain
Issue Date: 15-Jun-2012
Source: KOH SHAO MING (2012-06-15). SOURCE AND DRAIN EXTERNAL RESISTANCE REDUCTION FOR ADVANCED TRANSISTORS. ScholarBank@NUS Repository.
Abstract: High external resistance REXT is one of the obstacles for achieving continual improvement of drive current performance in the scaling of field-effect transistor (FET) technology. This dissertation focuses on developing novel impurities and process integration concepts to address the escalating dominance of high REXT in advanced strained Si transistors and FinFETs. In particular, tuning of the effective electron Schottky barrier height (SBH) of silicide with tellurium (Te) segregation was demonstrated and integrated with various novel process integration concepts for the first time. Additionally, electron SBH modulation with aluminum (Al) implant was also explored. By controlling the distribution of Al within the silicide using either pulsed laser anneal or carbon implant, the effective electron SBH of the metal contacts can be tuned. Strained Si FETs and FinFETs integrated with these low electron SBH metal contacts exhibit significant REXT reduction and drive current improvement. This firmly established the effectiveness of the novel electron SBH engineering concepts.
URI: http://scholarbank.nus.edu.sg/handle/10635/35570
Appears in Collections:Ph.D Theses (Open)

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