Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/35556
Title: Study of TaOx-based resistive Random Access Memory
Authors: WU WENJUAN
Keywords: Resistive Random Access Memory, RRAM, bipolar, filament, TaOx, Forming Gas Anneal
Issue Date: 22-Jun-2012
Source: WU WENJUAN (2012-06-22). Study of TaOx-based resistive Random Access Memory. ScholarBank@NUS Repository.
Abstract: The ultimate non-volatile memory (NVM) devices require characteristics including high density, fast write and read speed, low power consumption, good endurance and long data retention. Resistive Random Access Memory (RRAM) is considered as a potential candidate to replace Flash memory in the future due to its superior performance. To have a better understanding of TaO<sub><i>x</i></sub>-based RRAM devices, detailed DC electrical characterizations of Pt/TaO<sub><i>x</i></sub>/Pt RRAM devices are carried out. Pulse programming capability and multilevel resistances property of Pt/TaO<sub><i>x</i></sub>/Pt RRAM are then investigated and a novel pulse testing method to realize multilevel resistances is proposed. Finally, a novel high performance Cr/TaO<sub><i>x</i></sub>/Al (top to bottom) RRAM works as a bipolar switching device is reported. These RRAM devices have demonstrated excellent memory performance including small magnitude of switching voltages, a tight distribution of <i>V<sub>set</sub></i> and <i>V<sub>reset</sub></i>, low switching current, large off/on resistance ratio of up to 10<sup>7</sup>, and good retention characteristics at high temperature.
URI: http://scholarbank.nus.edu.sg/handle/10635/35556
Appears in Collections:Master's Theses (Open)

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