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Title: Interface studies of rare earth oxides on silicon and germanium substrates
Keywords: interface dipoles, high-k, photoemission, band alignment, rare earth, band offsets
Issue Date: 4-Jul-2012
Citation: LIU ZHIQIANG (2012-07-04). Interface studies of rare earth oxides on silicon and germanium substrates. ScholarBank@NUS Repository.
Abstract: In recent decades, the high-k/semiconductor interface is gaining much interest due to miniaturization of devices. The first part of this dissertation investigates the mechanisms behind interface dipole formation which is important for advanced gate stack engineering. Electron affinity and band offsets are measured using photoemission with the latter being corrected for differential charging using a novel, time-resolved method. After careful evaluation of the use of electronegativity in band alignment models, a dipole neutrality concept is introduced which allows accurate prediction of interface dipoles. The second part looks into manipulation of the interface to improve device characteristics. An ultra-thin yttrium interlayer is found to be able to improve interface trap density, leakage current and thermal stability of lanthanum aluminate capacitors on silicon. Furthermore, an interfacial-layer-free growth of yttrium oxide on germanium is demonstrated using a layer-by-layer approach. This is particularly useful in terms of equivalent-oxide-thickness scaling for next-generation devices.
Appears in Collections:Ph.D Theses (Open)

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