Advanced Luminescence-based characterisation of silicon wafer solar cells

Abstract

Luminescence imaging was studied to obtain spatially-resolved information of silicon wafer materials and solar cells. The polarization of light emission is shown to correlate strongly with extended defects in the devices. Line imaging luminescence spectroscopy was shown to reveal spectral correlations with the electrical properties of the material. A versatile luminescence imaging instrument was fabricated to develop characterisation of silicon wafer solar cells using luminescence. Different kinds of light emission at defect sites were shown to relate to metal impurity concentration in the device, and structural defects of the semiconductor crystal.