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Title: Laser Reflectance Modulation in Silicon Integrated Circuits
Keywords: reflectance, reflectance modulation, laser, thermoreflectance, electro-optical, failure analysis
Issue Date: 18-Jan-2012
Citation: TEO KIAN JIN JASON (2012-01-18). Laser Reflectance Modulation in Silicon Integrated Circuits. ScholarBank@NUS Repository.
Abstract: The reflected laser intensity modulations due to changes in the absorption coefficient and refractive index as a result of variation in the temperature, electric field and free-carrier density are studied and reported. Investigations were carried out on backside-prepared resistive structures at different applied electrical bias, dimensions and substrate thicknesses. The backside reflectance intensities are observed to modulate negatively with temperature increase. Subsequently, reflectance modulation experiments were carried out on backside prepared NMOS and PMOS transistors from the 0.18 µm process technology node with substrate thickness of 350 µm. The MOS channel at different modes of operation is successfully characterized for variations in gate bias, channel lengths and MOS device types. The results further the understanding of laser reflectance modulation of silicon integrated circuits, and present a novel application of a sensitive, non-invasive thermal probe, as well as, a novel technique to characterize the functionality of an MOS device.
Appears in Collections:Ph.D Theses (Open)

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