Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32808
Title: Method for fabricating semiconductor devices with shallow diffusion regions
Authors: TAN, DEXTER XUEMING
COLOMBEAU, BENJAMIN
ONG, CLARK KUANG KIAN
YEONG, SAI HOOI
NG, CHEE MANG 
PEY, KIN LEONG 
Issue Date: 24-Jan-2012
Source: TAN, DEXTER XUEMING,COLOMBEAU, BENJAMIN,ONG, CLARK KUANG KIAN,YEONG, SAI HOOI,NG, CHEE MANG,PEY, KIN LEONG (2012-01-24). Method for fabricating semiconductor devices with shallow diffusion regions. ScholarBank@NUS Repository.
Abstract: A method for fabricating a semiconductor device is presented. The method includes providing a substrate and forming a gate stack over the substrate. A first laser processing to form vacancy rich regions within the substrate on opposing sides of the gate stack is performed. The vacancy rich regions have a first depth from a surface of the substrate. A first implant causing end of range defect regions to be formed on opposing sides of the gate stack at a second depth from the surface of the substrate is also carried out, wherein the first depth is proximate to the second depth.
URI: http://scholarbank.nus.edu.sg/handle/10635/32808
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