Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32789
Title: Method for forming a shallow junction region using defect engineering and laser annealing
Authors: ONG, KUANG KIAN
YEONG, SAI HOOI
PEY, KIN LEONG 
CHAN, LAP
CHONG, YUNG FU
Issue Date: 15-Feb-2011
Source: ONG, KUANG KIAN,YEONG, SAI HOOI,PEY, KIN LEONG,CHAN, LAP,CHONG, YUNG FU (2011-02-15). Method for forming a shallow junction region using defect engineering and laser annealing. ScholarBank@NUS Repository.
Abstract: A method for forming a shallow junction region in a crystalline semiconductor substrate and method for fabricating a semiconductor device having the shallow junction region includes a defect engineering step in which first ions are introduced into a first region of the substrate and vacancies are generated in the first region. During the generation of substrate vacancies, the first region remains substantially crystalline. Interstitial species are generated in a second region and second ions are introduced into the second region to capture the interstitial species. Laser annealing is used to activate dopant species in the first region and repair implantation damage in the second region. The defect engineering process creates a vacancy-rich surface region in which source and drain extension regions having high dopant activation and low sheet resistance are created in an MOS device.
URI: http://scholarbank.nus.edu.sg/handle/10635/32789
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
US7888224.PDF115.52 kBAdobe PDF

OPEN

PublishedView/Download

Page view(s)

152
checked on Jan 19, 2018

Download(s)

89
checked on Jan 19, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.