Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32777
Title: Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
Authors: YU, HONGYU 
JINGDE, CHEN 
MINGFU, LI 
KWONG, DIM-LEE 
BIESEMANS, SERGE
KITTL, JORGE ADRIAN
Issue Date: 17-Mar-2009
Source: YU, HONGYU,JINGDE, CHEN,MINGFU, LI,KWONG, DIM-LEE,BIESEMANS, SERGE,KITTL, JORGE ADRIAN (2009-03-17). Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET. ScholarBank@NUS Repository.
Abstract: Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
URI: http://scholarbank.nus.edu.sg/handle/10635/32777
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