Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32776
Title: Schottky barrier source/drain n-mosfet using ytterbium silicide
Authors: ZHU, SHIYANG 
CHEN, JINGDE 
LEE, SUNGJOO 
LI, MING FU 
SINGH, JAGAR
ZHU, CHUNXIANG 
KWONG, DIM-LEE 
Issue Date: 17-Mar-2009
Source: ZHU, SHIYANG,CHEN, JINGDE,LEE, SUNGJOO,LI, MING FU,SINGH, JAGAR,ZHU, CHUNXIANG,KWONG, DIM-LEE (2009-03-17). Schottky barrier source/drain n-mosfet using ytterbium silicide. ScholarBank@NUS Repository.
Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi.sub.2-x) for source and drain is presented. The fabrication of YbSi.sub.2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi.sub.2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
URI: http://scholarbank.nus.edu.sg/handle/10635/32776
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