Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32738
Title: Method for forming a modified semiconductor having a plurality of band gaps
Authors: TENG, JING HUA
CHUA, SOO JIN 
DONG, JIAN RONG
Issue Date: 29-May-2007
Source: TENG, JING HUA,CHUA, SOO JIN,DONG, JIAN RONG (2007-05-29). Method for forming a modified semiconductor having a plurality of band gaps. ScholarBank@NUS Repository.
Abstract: A method for forming a modified semiconductor having a number of band gaps involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface and applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The method includes thermally annealing the layers to the surface. The methods result in a modified semiconductor which exhibits a number of different band gaps in a number of portions of the quantum region depending upon the positioning of the layers of materials on the surface immediately above the respective portions of the quantum region.
URI: http://scholarbank.nus.edu.sg/handle/10635/32738
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