Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32689
Title: Power MOSFET having enhanced breakdown voltage
Authors: LIANG, YUNG CHII 
SAMUDRA, GANESH SHANKAR 
GAN, KIAN PAAU
YANG, XIN 
Issue Date: 8-Feb-2005
Source: LIANG, YUNG CHII,SAMUDRA, GANESH SHANKAR,GAN, KIAN PAAU,YANG, XIN (2005-02-08). Power MOSFET having enhanced breakdown voltage. ScholarBank@NUS Repository.
Abstract: A MOSFET includes a dielectric, preferably in the form of a metal thick oxide that extends alongside the MOSFET's drift region. A voltage across this dielectric between its opposing sides exerts an electric field into the drift region to modulate the drift region electric field distribution so as to increase the breakdown voltage of a reverse biased semiconductor junction between the drift region and body region. This allows for higher doping of the drift region, for a given breakdown voltage when compared to conventional MOSFETs.
URI: http://scholarbank.nus.edu.sg/handle/10635/32689
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