Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32664
Title: P-type transparent copper-aluminum-oxide semiconductor
Authors: GONG, HAO 
WANG, YUE 
HUANG, LEI 
Issue Date: 24-Feb-2004
Source: GONG, HAO,WANG, YUE,HUANG, LEI (2004-02-24). P-type transparent copper-aluminum-oxide semiconductor. ScholarBank@NUS Repository.
Abstract: This invention provides a transparent Cu--Al--O semi-conducting film having a p-type conductivity greater than 0.95.times.10.sup.-1 S.multidot.cm.sup.-1. This invention also relates to a process for preparing a Cu--Al--O film having p-type conductivity, comprising: a) controllably vaporizing organo-copper and organo-aluminum precursors and carrying the vapors into a chemical vapor deposition chamber with an inert gas flow; b)reacting and depositing the vapors on a substrate, preferably a light-transmitting substrate, through a chemical vapor deposition process.
URI: http://scholarbank.nus.edu.sg/handle/10635/32664
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