Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/32659
DC Field | Value | |
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dc.title | Highly selective and complete interconnect metal line and via/contact hole filling by electroless plating | |
dc.contributor.author | LI, SAM FONG YAU | |
dc.contributor.author | NG, HOU TEE | |
dc.date.accessioned | 2012-05-02T02:28:28Z | |
dc.date.available | 2012-05-02T02:28:28Z | |
dc.date.issued | 2003-12-09 | |
dc.identifier.citation | LI, SAM FONG YAU,NG, HOU TEE (2003-12-09). Highly selective and complete interconnect metal line and via/contact hole filling by electroless plating. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/32659 | |
dc.description.abstract | A novel method for the activation of semiconductor substrates for highly selective electroless copper plating in multilayer interconnect metallization lines and vias/contact holes has been developed. A copper-seeded polysilicon layer is provided over the substrate to facilitate growth of copper into the vias. Subsequent rinsing and chemical-mechanical polishing processes allow removal of overgrowth of copper and the polysilicon layer to achieve overall smooth topography of the copper surface and the insulating layer surface of the substrate. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US6660636 | |
dc.source | PatSnap | |
dc.type | Patent | |
dc.contributor.department | CHEMISTRY | |
dc.identifier.isiut | NOT_IN_WOS | |
dc.description.patentno | US6660636 | |
dc.description.patenttype | Granted Patent | |
dc.contributor.patentassignee | THE NATIONAL UNIVERSITY OF SINGAPORE | |
Appears in Collections: | Staff Publications |
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US6660636.PDF | 127.24 kB | Adobe PDF | OPEN | Published | View/Download |
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