Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32608
Title: Ultra high resolution lithographic imaging and printing and defect reduction by exposure near the critical condition utilizing fresnel diffraction
Authors: VLADIMIRSKY, YULI 
BOURDILLON, ANTONY 
Issue Date: 7-May-2002
Source: VLADIMIRSKY, YULI,BOURDILLON, ANTONY (2002-05-07). Ultra high resolution lithographic imaging and printing and defect reduction by exposure near the critical condition utilizing fresnel diffraction. ScholarBank@NUS Repository.
Abstract: Ultra-high resolution lithographic imaging and printing refers to the reduction in printed feature size, or "demagnification" obtained by the use of "bias". A new meaning is given to Next Generation Lithography (NGL) in terms of fidelity in the reproduction of masks. Applying the classical manifestation of Fresnel diffraction, the mask pattern features are "demagnified" by "bias". Classically, bias is minimized but the invention uses it to advantage so that: (i) mask-wafer gaps are thus enlarged; (ii) mask features are enlarged 3.times.-6.times. for a given printed feature size (cf. classically 1:1 in proximity lithography); (iii) the technique is extensible to beyond 25 nm feature sizes and (iv) exposure times are reduced. The invention is specifically demonstrated in proximity X-ray lithography but has a generic extension to all lithographies that can use out of focus imaging to produce ultra-high resolution. In consequence of the diffraction, printing defects due to mask faults are reduced including edge roughness, writing errors, diffraction effects at shielded areas and absorber thickness variations. Moreover the exposure doses from mask features of various sizes are controlled by various techniques.
URI: http://scholarbank.nus.edu.sg/handle/10635/32608
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