Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/32603
Title: Simplified dual damascene process utilizing PPMSO as an insulator layer
Authors: SOO, CHOI PHENG
LOH, WYE BOON
CHAN, LAP
Issue Date: 27-Nov-2001
Source: SOO, CHOI PHENG,LOH, WYE BOON,CHAN, LAP (2001-11-27). Simplified dual damascene process utilizing PPMSO as an insulator layer. ScholarBank@NUS Repository.
Abstract: Only one photo mask defines the metal trench and via region. The mask blocks the UV light in the trench and via area forming Plasma Polymerized Methylsilane Oxide (PPMSO) in the exposed areas. Two step RIE plasma treatment using chlorine gas and oxygen gas removes the Plasma Polymerized Methylsilane (PPMS) in the trench and via regions. Conductive metal is deposited. A CMP process polishes back both excess metal along with the PPMSO, at a similar rate, to form: conducting metal lines, interconnects, and via contacts without metal dishing.
URI: http://scholarbank.nus.edu.sg/handle/10635/32603
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