Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/32593
DC Field | Value | |
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dc.title | Formation of air gap structures for inter-metal dielectric application | |
dc.contributor.author | SOO, CHOI PHENG | |
dc.contributor.author | TEE, KHENG CHOK | |
dc.contributor.author | ONG, KOK KENG | |
dc.contributor.author | CHAN, LAP | |
dc.date.accessioned | 2012-05-02T02:27:31Z | |
dc.date.available | 2012-05-02T02:27:31Z | |
dc.date.issued | 2001-06-26 | |
dc.identifier.citation | SOO, CHOI PHENG,TEE, KHENG CHOK,ONG, KOK KENG,CHAN, LAP (2001-06-26). Formation of air gap structures for inter-metal dielectric application. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/32593 | |
dc.description.abstract | A method for the formation of an air gap structure for use in inter-metal applications. A metal pattern of metal lines is formed, a layer of Plasma Polymerized Methylsilane (PPMS) resist is deposited on top of this pattern. The surface of the PPMS resist is subjected to selective exposure. The unexposed PPMS is removed after which the process is completed by closing up the openings within the PPMS. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US6251798 | |
dc.source | PatSnap | |
dc.type | Patent | |
dc.contributor.department | MATERIALS SCIENCE | |
dc.identifier.isiut | NOT_IN_WOS | |
dc.description.patentno | US6251798 | |
dc.description.patenttype | Granted Patent | |
dc.contributor.patentassignee | CHARTERED SEMICONDUCTOR MANUFACTURING COMPANY (SINGAPORE, SG) | |
dc.contributor.patentassignee | NATIONAL UNIVERSITY OF SINGAPORE (SINGAPORE, SG) | |
dc.contributor.patentassignee | NANYANG TECHNOLOGICAL UNIVERSITY OF SINGAPORE | |
Appears in Collections: | Staff Publications |
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US6251798.PDF | 67.94 kB | Adobe PDF | OPEN | Published | View/Download |
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