Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.037
Title: High-thermal-stability (HfO2)1-x(Al2O3)xfilm fabricated by dual-beam laser ablation
Authors: Li, Q. 
Ong, C.K. 
Wang, S.J.
Huan, A.C.H.
Ng, T.H. 
Chim, W.K. 
Keywords: High-k dielectric thin films
Interface
Metal-insulator-semiconductor structures
Pulse laser deposition
Issue Date: 2006
Source: Li, Q., Ong, C.K., Wang, S.J., Huan, A.C.H., Ng, T.H., Chim, W.K. (2006). High-thermal-stability (HfO2)1-x(Al2O3)xfilm fabricated by dual-beam laser ablation. Thin Solid Films 504 (1-2) : 45-49. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.037
Abstract: The high-thermal-stability amorphous (HfO2) 1-x(Al2O3)x thin films have been fabricated on p-type Si (100) using novel dual-beam pulse laser ablation technique. The microstructure, thermal stability and electrical properties of films have been studied by combinational characterization techniques. Silicides formed at the interface due to the Hf atom diffusion into Si substrate. The slight structure transition occurs at 1000 °C after 10 s rapid thermal annealing in N2, which suggests that the (HfO2) 1-x(Al2O3)x film has high thermal stability. High-frequency capacitance-voltage properties of capacitors show low equivalent oxide thickness at 1.7 nm for 10.0 nm films with high k value (∼22.5). The results indicate that the pseudo-binary (HfO2) 1-x(Al2O3)x film is a promising candidate, which can withstand the high-temperature process for silicon-based industry. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/28960
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.037
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

6
checked on Dec 6, 2017

WEB OF SCIENCETM
Citations

4
checked on Nov 20, 2017

Page view(s)

212
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.