Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10832-006-9909-x
Title: Growth and characterization of UHV sputtering HfO2film by plasma oxidation and low temperature annealing
Authors: Li, Q. 
Ong, C.K. 
Wang, S.J.
Wang, W.D.
Chi, D.Z.
Huan, A.C.H.
Keywords: High-k dielectric thin films
Metal-oxide-semiconductor
Rapid thermal annealing
UHV sputtering
Issue Date: 2006
Source: Li, Q., Ong, C.K., Wang, S.J., Wang, W.D., Chi, D.Z., Huan, A.C.H. (2006). Growth and characterization of UHV sputtering HfO2film by plasma oxidation and low temperature annealing. Journal of Electroceramics 16 (4) : 517-521. ScholarBank@NUS Repository. https://doi.org/10.1007/s10832-006-9909-x
Source Title: Journal of Electroceramics
URI: http://scholarbank.nus.edu.sg/handle/10635/28959
ISSN: 13853449
15738663
DOI: 10.1007/s10832-006-9909-x
Appears in Collections:Staff Publications

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