Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/28155
Title: Strained Multiple - Gate Transistors With Si/SiC and Si/SiGe Heterojunctions
Authors: LIOW TSUNG-YANG
Keywords: strain, finfet, mugfet, silicon-germanium, silicon-carbon
Issue Date: 30-Sep-2008
Source: LIOW TSUNG-YANG (2008-09-30). Strained Multiple - Gate Transistors With Si/SiC and Si/SiGe Heterojunctions. ScholarBank@NUS Repository.
Abstract: High performance multiple-gate transistors such as FinFETs are likely to be required beyond the 32 nm technology node. Process-induced strain techniques can significantly enhance the carrier mobility in the channels of such transistors. In this dissertation work, complementary lattice mismatched source and drain stressors are studied for both n and p-channel multiple-gate transistors. Si1-yCy (or SiC), which has a lattice constant smaller than that of Si, is employed to induce uniaxial tensile strain in the channel regions of n-channel devices. Si1-xGex (or SiGe), which has a lattice constant larger than that of Si, is employed to induce uniaxial compressive strain in the channel regions of p-channel devices.
URI: http://scholarbank.nus.edu.sg/handle/10635/28155
Appears in Collections:Ph.D Theses (Open)

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