Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/27898
Title: Room Tepmeaterature Ferromagnetism in ZnO Based Magnetic Semiconductors and Carbon Related Systems
Authors: MA YUWEI
Keywords: Spintronics, ZnO, Dilute Magnetic Semiconductor, Room Temperature Ferromagnetism, Carbon Dangling Bonds, Magnetic Oxide
Issue Date: 13-Jun-2011
Source: MA YUWEI (2011-06-13). Room Tepmeaterature Ferromagnetism in ZnO Based Magnetic Semiconductors and Carbon Related Systems. ScholarBank@NUS Repository.
Abstract: The engineering applications of spintronics devices require host materials (eg ZnO and C) to possess ferromagnetism above room temperature. Though ZnO based materials have been predicted theoretically to be ferromagnetic, the exact mechanism is not clear. In this project, both magnetic elements and non-magnetic elements doped ZnO and films have been investigated. Co doped ZnO films showed room temperature, which could be attributed to structural defects. Metallic Al, Pt or Zn doped ZnO films showed ferromagnetism above room temperature. The ferromagnetism might be attributed to the interaction of metal clusters and ZnO matrix. Furthermore, room temperature ferromagnetisms were also observed in ZnO-Al2O3 and ZnO-MgO films. Ferromagnetism was correlated with the defects density. Besides, the ferromagnetism was found in defects-related carbon system.
URI: http://scholarbank.nus.edu.sg/handle/10635/27898
Appears in Collections:Ph.D Theses (Open)

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