Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/27853
Title: Spin characteristics of electron transport in semiconductor
Authors: TAN SENG GHEE
Keywords: spintronic, transport, electron, device, spin-orbit-coupling, polarization
Issue Date: 23-Jun-2006
Source: TAN SENG GHEE (2006-06-23). Spin characteristics of electron transport in semiconductor. ScholarBank@NUS Repository.
Abstract: In this thesis, we studied the various means to induce spin-polarized currents in semiconductor materials. The pillar spin injector and the spreading resistance effects were used to increase spin injection. The interfacial effects on spin injection were determined self-consistently. In the ballistic limit, we used multiple, zero-gauge magnetic electric barriers to induce spin current in semicondutor 2DEGs. These devices were also used to design the single-transistor type of programmable logic and non-volatile memory. In device analysis, we presented theoretical models of Dresselhaus and Rashba spin orbit coupling and investigated their effects on enhancing or scattering spin current. We also derived a theoretical model of spin current induced by the cross magnetic-electric fields. The effects of electric field strength on cyclotron radius shift were studied for its monochromatic action on spin current. Last, we presented the use of non-equilibrium Keldysh method to study electron transport through a quantum dot.
URI: http://scholarbank.nus.edu.sg/handle/10635/27853
Appears in Collections:Ph.D Theses (Open)

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