Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/27810
Title: Realistic simulation of forward and reverse characteristics of 4H-SiC pn junction diode
Authors: WEI GUANNAN
Keywords: Simulation, MEDICI, 4H-SiC pn junction diode, defects, dislocation, Trap
Issue Date: 29-Mar-2008
Source: WEI GUANNAN (2008-03-29). Realistic simulation of forward and reverse characteristics of 4H-SiC pn junction diode. ScholarBank@NUS Repository.
Abstract: This thesis presents a methodology to simulate the forward and reverse characteristics of realistic 4H-SiC pn junctions. The superior property of SiC and motivation of this work are explained. The simulation models and parameters for forward and reverse characteristics of realistic 4H-SiC pn junctions are reviewed. The physical bases behind methodology of the simulation improvement are discussed. The extensive collection of reported 4H-SiC pn junction diode data formed the basis of calibration of SYNOPSYS MEDICI for 4H-SiC pn junction simulation. Relevant parameters in the trap and photogeneration models are modified for realistic simulations. Motivation and justification of the modifications are presented. A universally applicable model parameter set for simulation of the forward and reverse characteristics of practical 4H-SiC pn junction is proposed and verified against reported independent data not used in the calibration step.
URI: http://scholarbank.nus.edu.sg/handle/10635/27810
Appears in Collections:Master's Theses (Open)

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