Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/27802
Title: Heterostructured Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O12 ferroelectric thin films
Authors: SIM CHOW HONG
Keywords: PZT, BNT, Heterostructure, Fatigue, Series Connection Model, Rayleigh Law
Issue Date: 29-Nov-2006
Source: SIM CHOW HONG (2006-11-29). Heterostructured Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O12 ferroelectric thin films. ScholarBank@NUS Repository.
Abstract: Pb(Zr0.52Ti0.48)O3 (PZT) and (Bi3.15Nd0.85)Ti3O12 (BNT) were incorporated in a heterostructured thin film to develop an ideal material for nonvolatile ferroelectric random access memories (NVFRAM). The electrical properties of PZT, except its poor fatigue endurance, are all excellent for NVFRAM. BNT, however, is well known for its high fatigue resistance. Bilayered thin films with two different stacking sequences namely, BNT/PZT and PZT/BNT, were deposited via a combined sol-gel and RF-sputtering route. The fatigue characteristics of the BNT/PZT films showed much improvement, as desired. This confirmed that the coupling of PZT with a BNT layer has successfully improved the poor fatigue endurance of the former. However, a fatigue anomaly was observed in the PZT/BNT films, whereby a switchable polarization peak of more than 5 times higher than that of the initial state occured upon polarization switching. Extensive studies had been carried out to study such observation that has never been intrinsically reported before.
URI: http://scholarbank.nus.edu.sg/handle/10635/27802
Appears in Collections:Master's Theses (Open)

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