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Title: Heterostructured Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O12 ferroelectric thin films
Keywords: PZT, BNT, Heterostructure, Fatigue, Series Connection Model, Rayleigh Law
Issue Date: 29-Nov-2006
Citation: SIM CHOW HONG (2006-11-29). Heterostructured Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O12 ferroelectric thin films. ScholarBank@NUS Repository.
Abstract: Pb(Zr0.52Ti0.48)O3 (PZT) and (Bi3.15Nd0.85)Ti3O12 (BNT) were incorporated in a heterostructured thin film to develop an ideal material for nonvolatile ferroelectric random access memories (NVFRAM). The electrical properties of PZT, except its poor fatigue endurance, are all excellent for NVFRAM. BNT, however, is well known for its high fatigue resistance. Bilayered thin films with two different stacking sequences namely, BNT/PZT and PZT/BNT, were deposited via a combined sol-gel and RF-sputtering route. The fatigue characteristics of the BNT/PZT films showed much improvement, as desired. This confirmed that the coupling of PZT with a BNT layer has successfully improved the poor fatigue endurance of the former. However, a fatigue anomaly was observed in the PZT/BNT films, whereby a switchable polarization peak of more than 5 times higher than that of the initial state occured upon polarization switching. Extensive studies had been carried out to study such observation that has never been intrinsically reported before.
Appears in Collections:Master's Theses (Open)

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