Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/27725
Title: A study of transparent P-type semiconducting oxide Cu-Al-O
Authors: ONG CHIN HOCK
Keywords: P-type, Transparent, Semiconducting Oxide, Cu-Al-O
Issue Date: 26-Aug-2004
Source: ONG CHIN HOCK (2004-08-26). A study of transparent P-type semiconducting oxide Cu-Al-O. ScholarBank@NUS Repository.
Abstract: The bulk CuAlO2 powder and targets for physical vapour depositions were successfully fabricated. CuAlO2 phase was achieved at 1200A?C after calcination for more than 10 hours. The bulk CuAlO2 shows p-type conductivity and has an average resistivity of ~114 i??-cm. Cu-Al-O thin films were deposited by pulsed laser deposition (PLD) and radio-frequency (RF) magnetron sputtering. Reactive sputtering of metallic Cu and Al targets were also investigated in the environment of Ar/O2. Cu/Al atomic ratio close to 1-to-1 was achieved. The films prepared by PLD and sputtering of single-oxide target showed poor conductivities whereas films prepared by reactive co-sputtering showed moderate conductivity. Post-deposition annealing (PDA) was performed to improve the electrical properties of the as-deposited films. The films still possessed multiple phases after annealed at 750A?C. Formation of nearly-pure CuAlO2 thin films was achieved after annealing at 1000A?C for 3 hours with Ar flow and the electrical conductivity improved significantly.
URI: http://scholarbank.nus.edu.sg/handle/10635/27725
Appears in Collections:Master's Theses (Open)

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