Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/27469
Title: Innovative Design and Realization of Microwave and Millimeter-Wave Integrated circuits
Authors: CHEN YING
Keywords: RFIC, microwave, integrated circuits, VCO, mixer, oscillator
Issue Date: 21-Jan-2011
Source: CHEN YING (2011-01-21). Innovative Design and Realization of Microwave and Millimeter-Wave Integrated circuits. ScholarBank@NUS Repository.
Abstract: The current trend in wireless communication systems is towards higher operating frequencies with wider bandwidth. However, the higher operating frequencies lead to numerous design challenges in microwave and millimeter-wave ICs that are not present or not significant at lower frequencies. This thesis aims to propose and realize innovative circuit topologies and techniques in order to overcome design challenges in key building blocks of microwave and millimeter-wave front-end ICs. In order to overcome the start-up problem for microwave and millimeter-wave Colpitts oscillators, a parasitic cancellation technique is proposed. By cancelling the parasitic gate-drain or base-collector capacitance of the transistor using an inductor, the negative resistance, and hence, the maximum operating frequency of the microwave and millimeter-wave Colpitts oscillators are increased. The feasibility of the technique is first demonstrated in a discrete design as a proof of concept. Then, the MMIC proof of concept is shown using three Colpitts oscillator designs, one at X-band and two at Ka-band, in a 0.2-µm GaAs pHEMT technology with a fT of 60 GHz. An extended application of the parasitic cancellation technique is also introduced, which allows dual-band Colpitts VCO design using switched negative resistance shaping. In order to overcome the tuning limitations of conventional varactor-based VCOs, a new varactorless tuning technique suitable for microwave and millimeter-wave applications is proposed. The oscillation frequency is tuned using tunable negativeinductance (NI) and tunable negative-capacitance (NC) cells. Two wideband varactorless VCOs, implemented in a 0.35-µm SiGe BiCMOS process, are presented. A highly-linear up-conversion Gilbert mixer with ultra-low LOFT for Ka-band VSAT applications is also presented. An individual biasing technique has been proposed to reduce the LOFT due to device mismatch. In addition, a method is proposed to compensate the EM-related LOFT. NXP¿s QUBIC4X 0.25-µm SiGe:C BiCMOS technology is used for the implementation. The proposed up-conversion mixer can be used as a mixer cell to form the fully integrated image-reject singlesideband (SSB) up-converter with single-conversion low-IF architecture.
URI: http://scholarbank.nus.edu.sg/handle/10635/27469
Appears in Collections:Ph.D Theses (Open)

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