Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/25843
Title: Investigation on performance and reliability improvements of GaN-based heterostructure field effect transistors
Authors: TIAN FENG
Keywords: AlGaN/GaN, heterostructure field effect transistors (HFETs), Schottky contact, metal-insulator-semiconductor (MIS), dielectric, gate leakage
Issue Date: 5-Jul-2010
Source: TIAN FENG (2010-07-05). Investigation on performance and reliability improvements of GaN-based heterostructure field effect transistors. ScholarBank@NUS Repository.
Abstract: This dissertation focuses on the studies of using advanced Schottky electrodes or high quality dielectrics to reduce the gate leakage of AlGaN/GaN heterostructure field effect transistors (HFETs), thus achieving enhanced device performance. Of the several promising Schottky contacts (SCs) investigated, the Ni/Rh/Au SC exhibited superior performance, including a higher Schottky barrier height, lower leakage current, and better thermal stability. AlGaN/GaN HFETs with Ni/Rh/Au Schottky gate (SG) showed enhanced performance relative to the reference Ni/Au SG-HFETs. Dielectrics HfO2 and HfO2/Al2O3 were investigated as potential gate dielectric for use in metal-insulator-semiconductor (MIS)-HFETs. With the incorporation of an Al2O3 interfacial layer into HfO2, the bilayer HfO2/Al2O3 passivated MIS-HFETs exhibited not only improved electrical performance, but also enhanced thermal stability over the HfO2 counterparts. Comparison between Ni/Rh/Au SG-HFETs and HfO2/Al2O3 MIS-HFETs showed that the former exhibited better device thermal stability, while the latter enhanced transistor electrical performance.
URI: http://scholarbank.nus.edu.sg/handle/10635/25843
Appears in Collections:Ph.D Theses (Open)

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