Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/25824
Title: Adaptation and Application of A State-Of-The-Art Impedance analyzer for Characterization of Silicon P-I-N Diodes
Authors: PANJI GAZALI ILHAM SURYACANDRA
Keywords: high precision impedance analyzer, low frequency phase angle, capacitance, time constant, hydrogenated amorphous and microcrystalline silicon
Issue Date: 2-Feb-2011
Source: PANJI GAZALI ILHAM SURYACANDRA (2011-02-02). Adaptation and Application of A State-Of-The-Art Impedance analyzer for Characterization of Silicon P-I-N Diodes. ScholarBank@NUS Repository.
Abstract: Impedance spectroscopy is a powerful non-destructive characterisation technique that studies the response of samples to alternating current (AC) excitations. From a model based analysis of the impedance measurement, information on the sample under test such as dielectric constant, layer thickness, and charge transport can be obtained. In this master thesis project, a high precision impedance analyzer from INPHAZE was successfully adapted and tested for impedance measurements of semiconductor samples. The INPHAZE impedance analyzer has a very high phase precision in the order of mili-degrees which has previously been employed for the study of self-assembled mono-layers. As a proof of principle, hydrogenated amorphous and microcrystalline silicon (a-Si:H and ?c-Si) p-i-n diodes have been studied in this thesis with the adapted INPHAZE impedance analyzer. It was shown that the dynamics of mobile charge carriers in the neutral region of the intrinsic layer of p-i-n diode manifests as an independent time constant, which is larger than the time constant which represents dynamics of mobile charge carriers in the depletion region of the diode. As a result, the number of time constants extracted from the impedance spectrum of a p-i-n diode qualitatively reveals the electric-field profile in the intrinsic layer of the diode. It was found that the measured impedance spectrum of a-Si:H p-i-n diode with intrinsic layer of 250 nm at frequency range between 10 Hz ? 100 kHz consists of only one time constant. This indicates that the intrinsic layer of the diode is fully depleted. In contrast, at similar range of frequency, the impedance spectrum of ?c-Si:H p-i-n diode with intrinsic layer thickness of 1000 nm consists of two time constants. The extra time constant found in impedance spectrum of ?c-Si:H p-i-n diode corresponds to the region in the intrinsic layer of the diode where the electric field is negligibly small. However, there are fundamental limitations in the applicability of INPHAZE impedance analyzer for measurement of these silicon-based diodes at frequency below 1 Hz. In this range of frequency, the standard deviations of the measured phase angle are typically not smaller than the phase angles of impedance of the diodes. As a result, despite the very high phase precision of the INPHAZE impedance analyzer, the capacitance of these silicon-based diodes at frequency below 1 Hz is unable to be precisely determined.
URI: http://scholarbank.nus.edu.sg/handle/10635/25824
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