Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/23661
Title: Atomistic Simulation on Low-k/Ultra Low-k Materials
Authors: DAI LING
Keywords: ab initio, molecular dynamics, low-k, diffusion, adhesion, simulation
Issue Date: 11-Mar-2008
Source: DAI LING (2008-03-11). Atomistic Simulation on Low-k/Ultra Low-k Materials. ScholarBank@NUS Repository.
Abstract: The introduction of Cu and low-k/ultra low-k dielectric material, has incrementally improved the situation as compared to the conventional Al/SiO2 technology by reducing both resistivity of and capacitance between wires. In order to curb the diffusion of Cu into the dielectrics, it has been proposed to implement a layer of Ta between Cu and dielectrics. However, the suitability of the Cu/Ta/dielectrics system is not well established yet. Theoretical studies are required to investigate the structure, property and functional mechanisms of these materials. In this report, we carried out large ab initio molecular dynamics simulations to characterize the system materials. After a serial of simulation works, a Cu/Ta/SiCN/ultra low-k polymer system is proposed that is able to cope with the industrial size shrinking trend and offer satisfactory functional performances.
URI: http://scholarbank.nus.edu.sg/handle/10635/23661
Appears in Collections:Ph.D Theses (Open)

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